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 v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Typical Applications
The HMC294 is ideal for: * Microwave Point-to-Point Radios * LMDS * SATCOM
Features
Input IP3: +20 dBm LO / RF Isolation: 27 dB Passive: No DC Bias Required Small Size: 0.88 mm x 1.93 mm
5
MIXERS - CHIP
Functional Diagram
General Description
The HMC294 chip is a miniature passive GaAs MMIC double-balanced mixer which can be used as an upconverter or downconverter from 25 - 40 GHz in a small chip area of 1.70 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) gold ribbon of minimal length <0.31 mm (<12 mils).
Electrical Specifi cations, TA = +25 C, LO Drive = +14 dBm
Parameter Frequency Range, RF & LO Frequency Range, IF Conversion Loss Noise Figure (SSB) LO to RF Isolation LO to IF Isolation RF to IF Isolation IP3 (Input) IP2 (Input) 1 dB Gain Compression (Input) 22 31 27 15 24 9 Min. Typ. 25 - 40 DC - 2 10 10 27 38 33 20 35 12 13 13 Max. Units GHz GHz dB dB dB dB dB dBm dBm dBm
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Conversion Gain vs. Temperature @ LO = +14 dBm
0
Isolation @ LO = +14 dBm
0
RF/IF LO/RF LO/IF
CONVERSION GAIN (dB)
-10 -5 ISOLATION (dB)
-55 C +25 C +85 C
-20
-10
-30
-15
-40
-20 20 25 30 FREQUENCY (GHz) 35 40
-50 20 25 30 FREQUENCY (GHz) 35 40
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MIXERS - CHIP
35 40 35 40
Conversion Gain vs. LO Drive
0
+8 dBm +10 dBm +12 dBm +14 dBm +16 dBm
Return Loss @ LO = +14 dBm
0
CONVERSION GAIN (dB)
RETURN LOSS (dB)
-5
-5
-10
-10
LO RF
-15
-20 20 25 30 FREQUENCY (GHz) 35 40
-15 20 25 30 FREQUENCY (GHz)
IF Bandwidth @ LO = +14 dBm
0
Upconverter Performance Conversion Gain @ LO = +14 dBm
0
CONVERSION GAIN (dB)
IF CONVERSION GAIN IF RETURN LOSS
-5 IF BANDWIDTH
-5
-10
-10
-15
-15
-20 0 2 4 IF FREQUENCY (GHz) 6 8
-20 20 25 30 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 83
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Input IP3 vs. LO Drive
30
+8 dBm +12 dBm +10 dBm +14 dBm
Input IP3 vs. Temperature @ LO = +14 dBm
30
25 INPUT IP3 (dBm)
25 INPUT IP3 (dBm)
20
20
15
15
-55 C +25 C +85 C
10
10
5
MIXERS - CHIP
5 20 25 30 FREQUENCY (GHz) 35 40
5 20 25 30 FREQUENCY (GHz) 35 40
Input IP2 vs. LO Drive
50
Input IP2 vs. Temperature @ LO = +14 dBm
50
40 INPUT IP2 (dBm) INPUT IP2 (dBm)
40
30
30
20
+8 dBm +10 dBm +12 dBm +14 dBm
20
-55 C +25 C +85 C
10
10
0 20 25 30 FREQUENCY (GHz) 35 40
0 20 25 30 FREQUENCY (GHz) 35 40
Input P1dB vs. Temperature @ LO = +14 dBm
16
MxN Spurious Outputs
nLO mRF 0 xx 25 1 3.9 0 91 47 59 >110 86 68 >110 105 106 2 3 4
14 INPUT P1dB
0 1 2
12
10
-55 C +25 C +85 C
3 4
8
RF = 35 GHz @ -10 dBm LO = 34 GHz @ +14 dBm All values in dBc below the IF power level.
40
6 20 25 30 FREQUENCY (GHz) 35
5 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Absolute Maximum Ratings
RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +27 dBm -65 to +150 C -55 to +125 C
5
Outline Drawing
Die Packaging Information [1]
Standard WP-4 Alternate [2]
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004". 3. TYPICAL BOND PAD IS .004" SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
5 - 85
MIXERS - CHIP
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2).
Ribbon Bond
5
MIXERS - CHIP
Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Ribbon Bond
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
5 - 86
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz
Notes:
5
MIXERS - CHIP
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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